ÃëàâíàÿÊàòàëîãixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFV110N10P - (100V to 300V) Polar™ HiPerFETs with reduced Rds(on) || IXFV110N10P - Quad Industry GmbH

Àðòèêóë: IXFV110N10P
Íàèìåíîâàíèå: (100V to 300V) Polar™ HiPerFETs with reduced Rds(on) || IXFV110N10P
Ïðîèçâîäèòåëü: IXYS


Product Detail

Part Num: IXFV110N10P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (100V to 300V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: PLUS220
Status: Phase out/Obsolete: Contact the factory for availability and last time buys.
Support Docs: Product Discontinuation Notice

Recommended Alternatives Competing Parts
Parameter
IXFV110N10P
VDSS, Max, (V) 100
ID(cont), TC=25°C, (A) 110
RDS(on), max, TJ=25°C, (?) 0.0150
Ciss, Typ, (pF) 3550
Qg, Typ, (nC) 110
trr, Typ, (ns) -
trr, Max, (ns) 150
PD, (W) 480
RthJC, Max, (?C/W) 0.31
Package Style PLUS220


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