ГлавнаяКаталогixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFP10N60P - (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFP10N60P - Quad Industry GmbH

Артикул: IXFP10N60P
Наименование: (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFP10N60P
Производитель: IXYS


Product Detail

Part Num: IXFP10N60P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: TO-220
Status: Active Part

Recommended Alternatives Competing Parts
Parameter
IXFP10N60P
VDSS, Max, (V) 600
ID(cont), TC=25°C, (A) 10
RDS(on), max, TJ=25°C, (?) 0.74
Ciss, Typ, (pF) 1720
Qg, Typ, (nC) 32
trr, Typ, (ns) 120
trr, Max, (ns) 200
PD, (W) 200
RthJC, Max, (?C/W) 0.62
Package Style TO-220


Назад в раздел