ÃëàâíàÿÊàòàëîãixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFC12N80P - (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFC12N80P - Quad Industry GmbH

Àðòèêóë: IXFC12N80P
Íàèìåíîâàíèå: (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFC12N80P
Ïðîèçâîäèòåëü: IXYS


Product Detail

Part Num: IXFC12N80P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: ISOPLUS220™
Status: Phase out/Obsolete: Contact the factory for availability and last time buys.
Division: IXYS POWER
Support Docs: USA2013-013 IXFC GC SC TC UC.pdf

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Parameter
IXFC12N80P
VDSS, Max, (V) 800
ID(cont), TC=25°C, (A) 7
RDS(on), max, TJ=25°C, (?) 0.93
Ciss, Typ, (pF) 2800
Qg, Typ, (nC) 51
trr, Typ, (ns) -
trr, Max, (ns) 250
PD, (W) 120
RthJC, Max, (?C/W) 1.05
Package Style ISOPLUS220™


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