ГлавнаяКаталогixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFH35N30 - (60V to 1200V) Standard HiperFETs || IXFH35N30 - Quad Industry GmbH

Артикул: IXFH35N30
Наименование: (60V to 1200V) Standard HiperFETs || IXFH35N30
Производитель: IXYS


Product Detail

Part Num: IXFH35N30 DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (60V to 1200V) Standard HiperFETs
Configuration: Single
Package Style: TO-247
Status: Not for New Designs: Contact the factory for lead times (part is still available for purchase).

Recommended Alternatives Competing Parts
Parameter
IXFH35N30
VDSS, Max, (V) 300
ID(cont), TC=25°C, (A) 35
RDS(on), max, TJ=25°C, (?) 0.1
Ciss, Typ, (pF) 4800
Qg, Typ, (nC) 177
trr, Typ, (ns) -
trr, Max, (ns) 250
PD, (W) 298
RthJC, Max, (?C/W) 0.42
Package Style TO-247


Назад в раздел